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 HA16129FPJ
Single Watchdog Timer
REJ03F0144-0300 (Previous: ADE-204-027B) Rev.3.00 Jun 15, 2005
Description
The HA16129FPJ is a watchdog timer IC that monitors a microprocessor for runaway. In addition to the watchdog timer function, the HA16129FPJ also provides a function for supplying a high-precision stabilized power supply to the microprocessor, a power on reset function, a power supply voltage monitoring function, and a fail-safe function that masks the microprocessor outputs if a runaway is detected.
Functions
* Watchdog timer (WDT) function Monitors the P-RUN signal output by the microprocessor, and issues an auto-reset (RES) signal if a microprocessor runaway is detected. * Stabilized power supply Provides power to the microprocessor. * Power on and clock off functions The power on function outputs a low level signal to the microprocessor for a fixed period when power is first applied. The clock off function outputs a RES signal to the microprocessor a fixed period after a runaway occurs. * Power supply monitoring function When the reference voltage (Vout) falls and becomes lower than the NMI detection voltage (4.63 V, Typ) or the STBY detection voltage (3.0 V Typ), this function outputs either an NMI signal or an STBY signal, respectively. Note that NMI detection can be set to monitor either VCC or Vout. * OUTE function*1 (fail-safe function) Outputs a signal used to mask microprocessor outputs when a microprocessor runaway has been detected. * RES delay function Sets the delay between the time the NMI signal is output and the time the RES signal is output. * Protection functions The HA16129FPJ incorporates both Vout overvoltage prevention and current limiter functions. Note: 1. OUTE function: OUTE is an abbreviation for output enable.
Features
* * * * * High-precision output voltage: 5.0 V 1.5% The WDT supports both frequency and duty detection schemes. High-precision power supply monitoring function: 4.625 V 0.125 V Built-in OUTE function All functions can be adjusted with external resistors and/or capacitors.
Rev.3.00 Jun 15, 2005 page 1 of 22
HA16129FPJ
Pin Arrangement
P-RUN Rf Cf RR CR RT CRES GND Voadj OUTE 1 2 3 4 5 6 7 8 9 10 (Top view) 20 19 18 17 16 15 14 13 12 11 STBY STBYadj RES NMI NMIadj NMIsns VOUT CONT CS VCC
Rev.3.00 Jun 15, 2005 page 2 of 22
HA16129FPJ
Block Diagram
To microprocessor (or other device) power supply connections
VCC
CS 11 12
CONT 13 14
VOUT
71k 31.2k STBYadj 19 36.8k 1.5V - +
3.3k
150mV +- 1.24V - + Current limiter block Overvoltage detection block 9
Voadj
To Vout 15 NMIsns
STBY detection block
Regulator block
2k 80k - + 1.18V 25k
3.3k
STBY 20 17 NMI S STBY Q R RES SQ tON detection block - + 3.3k 10 OUTE
NMIadj 16
70k
RT 6 5 CR
NMI detection block
R OUTE block
QS R NMI
IR
19k 8.4k + - 20k
3.3k 18 RES
33k If*16 Cf 3 - + WDT block If/6 - - + IR*4/3
RES block
CRES + - 7
1 P-RUN IR 2V 8 4 2 If
Delay circuit block
GND
RR
Rf
Note: The current, voltage, and resistor values listed in the diagram are reference values. : Connect to Vout
Rev.3.00 Jun 15, 2005 page 3 of 22
HA16129FPJ
Pin Function
Related Function WDT. Pin No. 1 Symbol P-RUN Function Watchdog timer pulse input. The auto-reset function is controlled by the duty cycle or frequency of this input pulse signal.
2 3
tRH, tRL, tOFF 4
Rf Cf
RR
The resistor connected to this pin determines the current that flows in the Cf pin capacitor. Use the resistor value from 100 k to 500 k The current determined by the Rf pin charges the Cf capacitor and the potential on this pin determines the watchdog timer frequency band.
The resistor connected to this pin determines the current that flows in the CR pin capacitor. Use the resistor value from 100 k to 500 k
5
tON 6
CR
RT
The resistor RT, which determines only the time tON for the RES function is connected to this pin. This resistor determines the current that charges the capacitor CR for the time tON. Use the resistor value from 100 k to 500 k
The current determined by the RR pin charges the capacitor CR and the potential on this pin controls the RES function (toff, tRH, and tRL).
tr, tRES
7
CRES
- Vout Output Power supply Current limiter
8 9 10 11 12
GND Voadj OUTE VCC CS
The current determined by the Rf pin charges the capacitor CRES, and the RES delay times (Tr and TRES) are determined by the potential of this capacitor. Ground Insert the resistor Roadj if fine adjustment of the regulator output voltage Vout is required. Leave this pin open if Vout does not need to be changed. Output for the OUTE function Power supply Current limiter detection. Connect the overcurrent detection resistor between the CS pin and the VCC pin. If this function is not used, short this pin to VCC. Also, connect this pin to the emitter of the external transistor. (This function can not operate when VOUT < 2 V) Connect this pin to the base of the external transistor.
Vout
13
CONT
14
NMI 15
VOUT
NMIsns
Provides the regulator output voltage and the IC internal power supply. Connect this pin to the collector of the external transistor.
This pin senses the NMI detection voltage. If VCC is to be detected, connect this pin to the VCC pin (however, note that an external resistor is required), and if Vout is to be detected, connect this pin to the VOUT pin. Insert a resistor if fine adjustment of the NMI detection voltage is required. Leave this pin open if fine adjustment is not required. NMI output RES output Insert a resistor if fine adjustment of the STBY detection voltage is required. Leave this pin open if fine adjustment is not required. STBY output
16 Output Output STBY Output 17 18 19 20
NMIadj NMI RES STBYadj STBY
Rev.3.00 Jun 15, 2005 page 4 of 22
HA16129FPJ
Functional Description
This section describes the functions provided by the HA16129FPJ. See the section on formulas for details on adjustment methods. Regulator Block * Vout Voltage This IC provides a stabilized 5 V power supply by controlling the base current of an external transistor. The largest current (the maximum CONT pin current) that can be drawn by the base of this external transistor is 20 mA. Also note that the Vout output is also used for the power supply for this IC's internal circuits. Current Limiter Block When a current detection resistor (RCS) is connected between the VCC pin and the CS pin, and the voltage between these pins exceeds the VCS voltage (150 mV Typ), the CONT pin function turns off and the output voltage supply is stopped. This function can not work when VOUT < 2 V. Note: This function is not short detection. Output Voltage (Vout) Adjustment The output voltage can be adjusted by connecting an external resistor at the output voltage adjustment pin (Voadj). However, if for some reason the voltage on this Vout line increases and exceeds the voltage adjustment range (7 V Max), the CONT pin function turns off and the output voltage supply is stopped. Refer to the timing charts in conjunction with the following items. LVI (Low Voltage Inhibit) * NMI Detection Voltage This function monitors for drops in the power-supply voltage. This function can be set up to monitor either VCC or Vout. When Vout is monitored, a low level is output from the NMI pin if that voltage falls under the detection voltage (4.63 V Typ). Then, when the power-supply voltage that fell rises again, the NMI pin will output a high level. Note that this function has a fixed hysteresis of 50 mV (Typ). The monitored power supply is selected by connecting the NMIsns pin either to the VCC pin or to the VOUT pin. When detecting VCC, an external adjustment resistor is required.) The detection voltage can also be adjusted with the NMIadj pin. * STBY Detection Voltage This function monitors for drops in the Vout voltage. It monitors the Vout voltage, and outputs a low level from the STBY pin if that voltage drops below the detection voltage (3.0 V Typ). Then, when the power-supply voltage that fell rises again, the STBY pin will output a high level. Note that this function has a fixed hysteresis of 1.35 V (Typ). The detection voltage can also be adjusted with the STBYadj pin. Function Start Voltage This is the minimum required Vout voltage for the RES, NMI, STBY, and OUTE output pin functions to start operating. It is stipulated as the voltage that Vout must reach after power is first applied for these pins to output a low level. Hysteresis This is the difference between the LVI function detection voltage when the power-supply voltage drops, and the clear (reset) voltage when the power-supply voltage rises. (VHYSN = VNMI' - VNMI; VHYSS = VSTBY' - VSTBY)
Rev.3.00 Jun 15, 2005 page 5 of 22
HA16129FPJ OUTE Function When a microprocessor is in the runaway state, its outputs are undefined, and thus it is possible that the outputs may be driven by incorrect signals. This function is used to mask such incorrect microprocessor outputs. When the WDT function recognizes normal operation (when the RES output is high), the OUTE output will be held high. When the WDT function recognizes an abnormal state and an auto-reset pulse is output from the RES pin, the OUTE output will be held low. Thus microprocessor outputs during microprocessor runaway can be masked by taking the AND of those outputs and this signal using external AND gates. The OUTE output will go high when the CR pin voltage exceeds VthHcr2, and will go low when that voltage falls below VthLcr. There are limitation that apply when the OUTE function is used. Refer to the calculation formulas item for details. RES Function * tRH This period is the length of the high-level output period of the RES pulse when the P-RUN signal from the microprocessor stops. This is the time required for the CR potential to reach VthLcr from VthHcr1. * tRL This period is the length of the low-level output period of the RES pulse when the P-RUN signal from the microprocessor stops. This is the time required for the CR potential to reach VthHcr1 from VthLcr. * tOFF This is the time from the point the P-RUN signal from the microprocessor stops to the point a low level is output from the RES pin. During normal microprocessor operation, the potential on the CR pin will be about Vout - 0.2 V (although this value may change with the P-RUN signal input conditions, so it should be verified in the actual application circuit) and tOFF is the time for the CR pin potential to reach VthLcr from that potential. * tON tON is the time from the point the NMI output goes high when power is first applied to the point the RES output goes low. tON is the time for the potential of the CR pin to reach VthHcr1 from 0 V. * tr The time tr is the fixed delay time between the point the NMI output goes from low to high after the power-supply voltage comes up to the point RES goes from low to high. The time tr is the time for the CRES pin potential to fall from the high voltage (about 1.9 V) to Vthcres. * tRES The time tRES is the fixed delay time between the point the NMI output goes from high to low when the powersupply voltage falls to the point RES goes from high to low. The time tRES is the time for the CRES pin potential to rise from 0 V to Vthcres. WDT Function This function determines whether the microprocessor is operating normally or has entered a runaway state by monitoring the duty or frequency of the P-RUN signal. When this function recognizes a runaway state, it outputs a reset pulse from the RES pin and sets the OUTE pin to low from high. It holds the RES and OUTE pins fixed at high as long as it recognizes normal microprocessor operation. In this function, the potential of the Cf capacitor is controlled by the P-RUN signal. This Cf pin potential charges the capacitor CR that controls the reset pulse to be between VthLcf and VthHcf. The judgment as to whether or not the microprocessor is operating normally, is determined by the balance between the charge and discharge voltage on the capacitor CR at this time.
Rev.3.00 Jun 15, 2005 page 6 of 22
HA16129FPJ
Calculation Formulas
Item Reference voltage Formula
Vout = 1.225 1 + R1, R2; k
Notes
(
37 // R1 12 // R2
(
While the Vout voltage will be 5 V 1.5% when the Voadj pin is open, the circuit shown here should be used to change the Vout voltage externally.
VCC CS
Vout Voadj
R1 R2
Current limiter voltage
VCS (150 mV Typ) < IL RCS
When this function operates, the base current to the external transistor connected to the CS pin stops and the Vout output is lowered.
RCS IL
VCC
CS
Vout
OVP
--
This function prevents the microprocessor from being damaged if the Vout voltage is inadvertently increased to too high a level. The OVP detection voltage is fixed.
tRH, tRL
tRH = 3.3 x CR RR tRL = 1.1 x CR RR
These determine the reset pulse frequency and duty.
RES
tRL
tRH
tON
tON = 1.1 x CR RT
Sets the time from the rise of the NMI signal to the point the RES output is cleared.
NMI
RES
tON
tOFF
tOFF = 6.5 x CR RR
Sets the time from the point the P-RUN pulse stops to the point a reset pulse is output.
P-RUN
RES
toff
Rev.3.00 Jun 15, 2005 page 7 of 22
HA16129FPJ
Calculation Formulas (cont.)
Item VSTBY Formula
VSTBY = 1.48 x
Notes
The voltage at which the STBY signal is output when Vout falls. The STBY detection voltage can be adjusted by connecting a resistor between the STBYadj pin and ground (R3). However, the STBY recovery voltage cannot be adjusted.
Vout Vout VSTBY STBYadj
R1
( 29.5 +67.6 // R1 + 1( 36.2
VSTBY'
STBY
STBY
t
VNMI (Vout detection)
VNMI = 1.2 x 1 + R1, R2; k
(
R1 // 73 R2 // 25
(
The voltage at which the NMI signal is output when Vout falls. (When NMIsns is connected to Vout.) The NMI detection voltage can be adjusted by connecting resistors between the NMIadj pin and Vout (R1), and between the NMIadj pin and ground (R2).
Vout NMIsns
R2 NMIadj R1
GND
NMI Vout
VNMI' VNMI
NMI
t
VNMI (VCC detection)
VNMI = 4.62 x
( R2 R197.1 + 1( //
( R2 R145.5 + 1( //
Recovery voltage
VNMI = 4.68 x R1, R2; k
The voltage at which the NMI signal is output when VCC falls. (When NMIsns is connected to VCC.) The NMI detection voltage can be adjusted by connecting resistors between the NMIsns pin and VCC (R1), and between the NMIsns pin and ground (R2).
R1
VCC CS
NMIsns
R2
Vout
NMI
VNMI'
VCC
VNMI
NMI
GND
t
OUTE
CR x RR > 19.3 x Cf x Rf
If the OUTE function is used, the relationship shown at the left must be fulfilled to assure that pulses are not incorrectly generated in this output when a microprocessor runaway state is detected.
Rev.3.00 Jun 15, 2005 page 8 of 22
HA16129FPJ
Calculation Formulas (cont.)
Item WDT. Formula
0.31 x (Du - 24) fLine1 = Cf Rf fLine2 = 24% (fixed) 0.024 fLine3 = Cf Rf fLine4 = 99% The relationship between fLine1 and fLine3 fLine1 = fLine3 x 12.9 (Du - 24)
Notes
The WDT function judges whether the P-RUN pulse signal is normal or not. If the WDT function judges the P-RUN pulse signal to be abnormal, it outputs a reset signal. The normal range is the area enclosed by fLine1 to fLine4 in the figure.
fLine1
Frequency
Normal operation area
fLine2
fLine3
fLine4
Du: The P-RUN signal duty cycle
tH
tL
t Du = H x 100 tH + tL
Duty
Rev.3.00 Jun 15, 2005 page 9 of 22
HA16129FPJ
Timing Charts
Whole system timing chart
VCC
VOUT
VSTBY'
VNMI
VNMI' VSTBY
STBY
NMI
RES
tON
tRL
tRH
tRES
tRES
tr
OUTE
tOFF
P-RUN
Microprocessor runaway
Rev.3.00 Jun 15, 2005 page 10 of 22
HA16129FPJ WDT. timing chart
VOUT (5 V) Normal operation High-frequency runaway Low-frequency runaway
P-RUN VthHcf Cf VthLcf VthHcr2
CR VthHcr1 VthLcr RES
tOFF tRH
tRL
OUTE
LVI timing chart
VCC VNMI' VSTBY' VOUT VNMI VSTBY
STBY
NMI
CR
tr
RES & OUTE
CRES
tON
tRES Vthcres
Rev.3.00 Jun 15, 2005 page 11 of 22
HA16129FPJ
Absolute Maximum Ratings
(Ta = 25C)
Item Power supply voltage CS pin voltage CONT pin current CONT pin voltage Vout pin voltage P-RUN pin voltage NMIsns pin voltage NMI pin voltage STBY pin voltage RES pin voltage OUTE pin voltage Power dissipation*1 Operating temperature Storage temperature Note: Symbol VCC VCS Icont Vcont Vout VPRUN VNMIsns VNMI VSTBY VRES VOUTE PT Topr Tstg Rating 40 VCC 20 VCC 12 Vout VCC Vout Vout Vout Vout 400 -40 to +85 -50 to +125 Unit V V mA V V V V V V V V mW C C
1. This is the allowable value when mounted on a 40 x 40 x 1.6 mm glass-epoxy printed circuit board with a mounting density of 10% at ambient temperatures up to Ta = 77C. This value must be derated by 8.3 mW/C above that temperature.
Power Dissipation PT (mW)
400 300 200 100 0 -40 85C -20 0 20 40 60 80 77C
100
120
140
Ambient Temperature Ta (C)
Rev.3.00 Jun 15, 2005 page 12 of 22
HA16129FPJ
Electrical Characteristics
(Ta = 25C, VCC = 12V, Vout = 5.0V, Rf = RR = 180k, Cf = 3300pF, CR = 0.1F, RT = 390k, CRES = 1500pF, RCS = 0.2)
Item Power supply current Current limiter voltage Symbol ICC VCS Min - 100 Typ 10 150 Max 15 200 Unit mA mV Test Conditions VCS = (VCC pin voltage - CS pin voltage) VCC = 12V, Icont = 5mA VCC = 6 to 17.5V, Icont = 10mA Icont = 0.1 to 15mA Vi = 0.5Vrms, fi = 1kHz Icont = 5mA
Regulator block
Output voltage Input voltage stabilization
Vout Volin
4.925 -30
5.00 -
5.075 30
V mV
Load current stabilization Ripple exclusion ratio Output voltage temperature coefficient Output voltage adjustment range Input high-level voltage Input low-level voltage Input high-level current
Voload RREJ | Vout/T | VoMAX ViH ViL IiH
-30 (45) - -
- 75 40 - - - 300 0 Vout - 0.7 Vout - 0.7
30 - (200) 7.0 - 0.8 500 5 Vout + 0.2 0.4 1.4 Vout + 0.2 0.4 1.4
mV dB ppm/C V V V A A V V V V V V
2.0 - - -5 Input low-level current IiL High level VOHN Vout - 0.2 NMI output block Low level VOLN - - Function start voltage VSTN High level VOHS Vout - 0.2 STBY output block Low level VOLS - - Function start voltage VSTS Note: Values in parentheses are design reference values. P-RUN input block
ViH = 5.0V ViL = 0.0V IOHN = 0mA IOLN = 2.0mA IOHS = 0mA IOLS = 2.0mA
Rev.3.00 Jun 15, 2005 page 13 of 22
HA16129FPJ
Electrical Characteristics (cont.)
(Ta = 25C, VCC = 12V, Vout = 5.0V, Rf = RR = 180k, Cf = 3300pF, CR = 0.1F, RT = 390k, CRES = 1500pF, RCS = 0.2)
Item High level Low level Function start voltage High level Low level Function start voltage Power on time Clock off time Reset pulse high time Reset pulse low time LVI function NMI function (Vout detection) NMI function (VCC detection) STBY function Detection voltage 1 Hysteresis 1 Temperature coefficient Detection voltage 2 Hysteresis 2 Symbol VOHR VOLR VSTR VOHE VOLE VSTE ton toff tRH tRL VNMI1 VHYSN1 | VNMI/T | VNMI2 VHYSN2 Min Vout - 0.2 - - Vout - 0.2 - - 25 80 40 15 4.5 - - 5.0 0.5 Typ Vout - 0.7 Vout - 0.7 40 130 60 20 4.63 50 100 5.4 0.8 Max Vout + 0.2 0.4 1.4 Vout + 0.2 0.4 1.4 60 190 90 30 4.75 100 (400) 5.7 1.3 Unit V V V V V V ms ms ms ms V mV ppm/C V V R1 = 13k, R2 = 390k R1 = 13k, R2 = 390k Test Conditions IOHR = 0mA IOLR = 2.0mA IOHE = 0mA IOLE = 2.0mA
RES output block OUTE output block RES function
Detection voltage Hysteresis Temperature coefficient
VSTBY VHYSS | VSTBY/T | tRES
2.70 1.20 - (100) (100)
3.00 1.35 100 200 200
3.30 1.50 (400) (300) (300)
V V ppm/C s s
RES delay time
Disable time
Recovery time tr Note: Values in parentheses are design reference values.
Rev.3.00 Jun 15, 2005 page 14 of 22
HA16129FPJ
Test Circuits
* Vout test circuit
Icont A VCC STBY NMI RES Voadj P-RUN Rf NMIadj Cf RR CR RT GND CRES Here, the Vout voltage is for a VCC of 12V, and Icont is monitored as Vout is varied. HA16129FPJ NMIsns VCC CS CONT Vout STBYadj Units: Resistors Capacitors F Vout
f = 1kHz duty = 50%
180k
3300p 180k
0.1
390k
1500p
* ICC test circuit
IIN VCC STBY NMI RES Voadj P-RUN Rf NMIadj Cf RR CR RT GND CRES HA16129FPJ NMIsns VCC CS CONT Vout STBYadj *ICC = IIN + Iout Iout Vout
f = 1kHz duty = 50%
180k
3300p 180k
0.1
390k
1500p
* Test circuit for other parameters
VCC STBY NMI RES
Frequency counter
VCC
CS
CONT
Vout STBYadj
NMI Vout detection R1 13k NMI VCC detection R2 390k
HA16129FPJ
NMIsns NMIadj
Voadj P-RUN Rf f = 1kHz duty = 50% 180k Cf RR CR RT GND CRES
V
3300p 180k
0.1
390k
1500p
Rev.3.00 Jun 15, 2005 page 15 of 22
HA16129FPJ
System Circuit Examples
* Example of a basic system
1
180k
P-RUN Rf Cf
STBY 20
STBYadj 19 RES 18
STBY
2
3300p
3
180k
RES NMI VCC
HA16129FPJ
4
0.1 390k 1500p
RR CR RT CRES GND Voadj
NMI 17 NMIadj 16 NMIsns 15
5 6 7 8 9
(5 V)
Microprocessor
PORT
To other power supplies
PORT
VOUT 14 CONT 13 CS 12
0.2
+
200
10 OUTE
VCC 11
DS
+
BATTERY
* Example of a system using a backup circuit and a primary voltage monitoring circuit
1
180k
P-RUN Rf Cf
STBY 20
STBYadj 19 RES 18
STBY
2
3300p
3
180k
RES NMI
HA16129FPJ
4
0.1 390k 1500p
RR CR RT CRES GND Voadj
NMI 17 NMIadj 16 NMIsns 15 VOUT 14 CONT 13 CS 12
+
5 6 7 8 9
VCC PORT
R2 Q1
Microprocessor
PORT
To other power supplies
(5V)
R4 R1 R3 Q2 D1
200
0.2
10 OUTE
VCC 11
Primary detection
+
IGN R5 SW. BATTERY
DZ
Backup circuit DS: Schottky diode DZ: Zener diode
DS
Rev.3.00 Jun 15, 2005 page 16 of 22
Load
Load
IGN SW.
HA16129FPJ
Operating Waveforms
Frequency vs. Duty Characteristics
100k
Ta = 25C, CR = 0.1F, RR = 180k, RT = 390k, Rf = 180k, Cf = 3300pF CRES = 1500pF Runaway area
RES and OUTE runaway detection lines
10k
OUTE normal recovery line
Frequency (Hz)
Normal area
1k
RES OUTE
Monitor
100
Pulse generator VOH: 5V VOL: 0V
10 20
30
40
50
60 Duty (%)
70
80
90
100
Power On Time (tON) vs. RT Resistance Characteristics 1000
500 Ta = 25C, VCC = 0 12V, Rf = 180k, Cf = 3300pF, CRES = 1500pF
CR = 0.47F
Power On Time (tON) (ms)
100 50
CR = 0.1F
10
5
CR = 0.033F
1 10
50
100
500
1000
RT Resistance (k)
Rev.3.00 Jun 15, 2005 page 17 of 22
HA16129FPJ
Clock Off Time (toff) vs. RR Resistance Characteristics 1000 Ta = 25C, Rf = 180k, Cf = 3300pF, CRES = 1500pF, RT = 390k
CR = 0.47F
500
Clock Off Time (toff) (ms)
CR = 0.1F
100
50
CR = 0.033F
10 10
50
100
500
1000
RR Resistance (k)
Reset Pulse High Time (tRH) vs. RR Resistance Characteristics Ta = 25C, Rf = 180k, Cf = 3300pF, RT = 390k, CRES = 1500pF
1000 500
Reset Pulse High Time (tRH) (ms)
CR = 0.47F
CR = 0.1F 100 50 CR = 0.033F 10 5
1 10
50
100
500
1000
RR Resistance (k)
Rev.3.00 Jun 15, 2005 page 18 of 22
HA16129FPJ
Reset Pulse Low Time (tRL) vs. RR Resistance Characteristics 1000 500 Ta = 25C, Rf = 180k, Cf = 3300pF, RT = 390k, CRES = 1500pF CR = 0.47F
Reset Pulse Low Time (tRL) (ms)
100 50
CR = 0.1F
10 5
CR = 0.033F
1 10
50
100
500
1000
RR Resistance (k)
RES Delay Time and Recovery Time (tr) vs. Rf Resistance Characteristics 10000 5000
RES Delay Time and Recovery Time (tr) (s)
Ta = 25C, Cf = 3300pF, RR = 180k, RT = 390k, CR = 0.1F
CRES = 0.01F
1000 500
CRES = 1500pF
100 CRES = 560pF 50
10 10
50
100
500
1000
Rf Resistance (k)
Rev.3.00 Jun 15, 2005 page 19 of 22
HA16129FPJ
RES Delay Time and Disable Time (tRES) vs. Rf Resistance Characteristics 10000 5000
RES Delay Time and Disable Time (tRES) (s)
Ta = 25C, Cf = 3300pF, RR = 180k, CR = 0.1F, RT = 390k CRES = 0.01F
1000 CRES = 1500pF 500
100 50
CRES = 560pF
10 10
50
100
500
1000
Rf Resistance (k)
Output Voltage vs. Roadj Resistance (to Ground) Characteristics 6.0 Ta = 25C, VCC = 12V, Cf = 3300pF, Rf = 180k, CR = 0.1F, RR = 180k, RT = 390k, CRES = 1500pF
5.8
5.6
Output Voltage (V)
VCC
5.4
Vout Voadj
V
Roadj
5.2
5.0
4.8
100
500
1000
5000
*
Roadj Resistance (to Ground) (k)
Rev.3.00 Jun 15, 2005 page 20 of 22
HA16129FPJ
Output Voltage vs. Roadj Resistance (to Vout) Characteristics 5.0 Ta = 25C, VCC = 12V, Cf = 3300pF, Rf = 180k, CR = 0.1F, RR = 180k, RT = 390k, CRES = 1500pF
4.8
Output Voltage Vout (V)
4.6
4.4
4.2
VCC
Vout Voadj
V
Roadj
4.0
3.8
100 k
500 k
1M
5M
10 M
Roadj Resistance (to Vout) (k)
ICONT Current vs. Vout Voltage Characteristics 40
Ta = 25C, Cf = 3300pF, Rf = 180k, CR = 0.1F, RR = 180k, RT = 390k, CRES = 1500pF
30
ICONT Current (A)
20
10
0 4.92
4.94
4.96 4.98 Vout Voltage (V) ICONT
5.00
5.02
A
Vout
Vout CONT
CS
VCC
VCC 12 V
Vout Voltage (V)
Rev.3.00 Jun 15, 2005 page 21 of 22
HA16129FPJ
Package Dimensions
JEITA Package Code P-SOP20-5.5x12.6-1.27 RENESAS Code PRSP0020DD-A Previous Code FP-20DA MASS[Typ.] 0.31g
*1
D
F
NOTE) 1. DIMENSIONS"*1 (Nom)"AND"*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET.
20
11
bp
b1
HE
c1
E
Index mark
Reference Symbol
*2
c
Dimension in Millimeters Min Nom 12.6 5.5 Max 13
Terminal cross section
D E
1
Z
e
*3
10
bp
A2 A1 0.00 0.10 0.20 2.20 0.34 0.42 0.40 0.17
1
x
M
L1
A bp b1 c c
0.50
0.22 0.20
0.27
A
HE
0 7.50 7.80 1.27
8 8.00
A1
y
L
e x y
0.12 0.15 0.80 0.50
1
Detail F
Z L L 0.70 1.15
0.90
Rev.3.00 Jun 15, 2005 page 22 of 22
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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